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US 2006/0131592 A1Published application
Image sensor pixel having a transfer gate formed from P+ or N+ doped polysilicon
AssigneeOmniVision Technologies, Inc.
InventorHoward Rhodes
Life of this patent
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Abstract
An active pixel using a transfer gate that has a polysilicon gate doped with P+ is disclosed. The pixel includes a photosensitive element formed in a semiconductor substrate and an n-type floating node formed in the semiconductor substrate. An n-channel transfer transistor having a transfer gate is formed between the floating node and the photosensitive element. The transfer gate is doped with a p-type dopant.
Claims24
A pixel comprising:
- a photosensitive element formed in a semiconductor substrate;
- an n-type floating node formed in said semiconductor substrate;
- and
- an n-channel transfer transistor having a transfer gate between said floating node and said photosensitive element, said transfer gate doped with a p-type dopant.
1 more element
A pixel comprising:
- a photosensitive element formed in a semiconductor substrate;
- a p-type floating node formed in said semiconductor substrate;
- and
- a p-channel transfer transistor having a transfer gate between said floating node and said photosensitive element, said transfer gate doped with a n-type dopant.
1 more element
A transistor comprising:
- a source region formed in a semiconductor substrate of a first conductivity type;
- a drain region formed in a semiconductor substrate of said first conductivity type;
- and
- a gate formed atop of said semiconductor substrate between said source and drain region, said gate doped with a second conductivity type.
1 more element
A method for forming a pixel in a semiconductor substrate comprising:
- forming a photosensitive element in said semiconductor substrate;
- forming a floating node in said semiconductor substrate, said floating node of a first conductivity type;
- forming a transfer transistor having a transfer gate between said photosensitive element and said floating node;
- and
- doping said transfer gate with a second conductivity type.
2 more elements
Dependencies are inferred from the claim text.