Organic semiconductor device and process of manufacturing the same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsYasuyuki Arai, Noriko Shibata
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Abstract
The present invention is for providing a sophisticated active matrix type organic semiconductor device. A first electrode 102 is formed on an insulated surface. A second insulated film 104 is formed on the first electrode 102 via a first insulated film 103. An organic semiconductor film is formed on an opening part formed on the second insulated film 104 and the second insulated film 104. An organic semiconductor film 105 is obtained by polishing the same until the second insulated film 104 is exposed. Furthermore, by forming a second electrode 106 and a third electrode 107 on the organic semiconductor film 105, an organic semiconductor device of the present invention can be obtained.
Claims22
A semiconductor device comprising:
- a first electrode formed over an insulated surface;
- a first insulated film formed over the first electrode;
- a second insulated film formed over the first insulated film, having an opening part at a position superimposed over the first electrode;
- an organic semiconductor film formed in the opening part;
- and
- a second electrode and a third electrode formed over the organic semiconductor film,
- wherein taper angle of a rim of the opening part is 45° to 60°.
A semiconductor device comprising:
- a first electrode formed over an insulated surface;
- a first insulated film formed over the first electrode;
- a second insulated film formed over the first insulated film, having an opening part at a position superimposed over the first electrode;
- an organic semiconductor film formed in the opening part;
- and
- a second electrode and a third electrode formed over the organic semiconductor film,
- wherein the organic semiconductor film is formed in contact with the first insulated film, and
- wherein taper angle of a rim of the opening part is 45° to 60°.
A semiconductor device comprising:
- a gate electrode provided over a substrate;
- a gate insulator comprising a first insulated film and a second insulated film, said first insulated film provided over said gate electrode, said second insulated film provided over said first insulated film, said second insulated film provided with an opening part at a position superimposed over said gate electrode;
- a channel region provided over said gate electrode with said first insulated film therebetween, said channel region provided in an organic semiconductor film provided in said opening part;
- and
- a source electrode and a drain electrode provided over said organic semiconductor film,
- wherein taper angle of a rim of the opening part is 45° to 60°.
A semiconductor device comprising:
- a gate electrode provided over a substrate;
- a gate insulator comprising a first insulated film and a second insulated film, said first insulated film provided over said gate electrode, said second insulated film provided over said first insulated film said second insulated film provided with an opening part at a position superimposed over said gate electrode;
- a channel region provided over said gate electrode with said first insulated film therebetween, said channel region provided in an organic semiconductor film provided in said opening part;
- and
- a source electrode and a drain electrode provided over said organic semiconductor film,
- wherein said organic semiconductor film is provided in contact with said first insulated film, and
- wherein taper angle of a rim of the opening part is 45° to 60°.
Dependencies are inferred from the claim text.