Organic memory device and method of manufacturing the same
OwnerSung Choi, Chan Park +2inventors
InventorsSung Choi, Chan Park, Han Yu, Ung Pi
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Abstract
An organic memory device and a method of manufacturing the same are disclosed. The organic memory device includes an electron channel layer including an organic layer, in which nano particles of a uniform size are dispersed, interposed between metal electrodes, thus having electrical bistability. The organic memory device uses a change of electrical conductivity which results from a substantial change of the electrical structure of the electron channel layer when a voltage is applied. The organic memory device can be integrated using a simple manufacturing process, and ensures uniformity between devices due to the threshold voltage characteristics, even when highly miniaturized.
Claims16
An organic memory device comprising:
- a bottom electrode;
- a top electrode facing the bottom electrode;
- and
- an electron channel layer, interposed between the bottom electrode and the top electrode, and comprising:
- a first organic layer;
- a layer of nano particles separated by a uniform distance and arrayed, on the first organic layer;
- and
- a second organic layer covering the nano particles.
An organic memory device comprising:
- a bottom electrode;
- a top electrode facing the bottom electrode;
- and
- an electron channel layer, interposed between the bottom electrode and the top electrode, and comprising:
- an organic layer;
- and
- nano particles which are separated from each other and are dispersed in the organic layer.
A method of manufacturing an organic memory device, the method comprising:
- forming a bottom electrode;
- forming an electron channel layer comprising an organic layer, in which metal nano particles are dispersed and separated from each other, on the bottom electrode;
- and
- forming a top electrode on the organic layer.
Dependencies are inferred from the claim text.