Organic thin-film transistor and method for manufacturing same
AssigneeKonica Minolta Holdings, Inc.
InventorsKatsura Hirai, Hiroshi Kita, Hiroaki Arita
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Abstract
It is an object of the present invention to provide an organic thin-film transistor exhibiting high carrier mobility and a manufacturing method thereof. Disclosed is an organic thin-film transistor prossessing a film having a contact angle against pure water of a surface of not less than 50°, wherein an organic semiconductor layer is formed on the film prepared by a CVD (chemical vapor deposition) method employing a reactive gas.
Claims16
An organic thin-film transistor comprising a film having a contact angle against pure water of a surface of not less than 50°,
- wherein an organic semiconductor layer is formed on the film prepared by a CVD (chemical vapor deposition) method employing a reactive gas.
A method for manufacturing an organic thin-film transistor comprising a film having a contact angle against pure water of a surface of not less than 50°,
- wherein an organic semiconductor layer is formed on the film provided on a gate insulating layer after the gate electrode and the gate insulating layer are formed on a substrate surface, which is prepared by a CVD (chemical vapor deposition) method employing the reactive gas.
Dependencies are inferred from the claim text.