Resistance variable devices with controllable channels

A memory element comprising:

• a substrate;
• a conductive line over the substrate;
• a metal plug electrically coupled to the conductive line;
• an anodic aluminum oxide layer over the metal plug;
• a plurality of conductive nanostructures within the anodic aluminum oxide layer;
• at least one nanostructure being electrically coupled to the metal plug;
• at least one resistance variable material layer is over the anodic aluminum oxide layer;
• and
• an electrode over the at least one resistance variable material layer.

A processor system, comprising:

• a processor;
• and
• a memory device comprising a memory element, the memory element comprising a metal plug over a substrate;
• an anodic aluminum oxide layer over the metal plug;
• a plurality of conductive nanostructures within the anodic aluminum oxide layer;
• at least one nanostructure being electrically coupled to the metal plug;
• at least one resistance variable material layer is over the anodic aluminum oxide layer;
• and a second electrode over the at least one resistance variable material layer.

A method of forming a memory element, the method comprising the acts of:

• forming a first electrode comprising at least one conductive nanostructure;
• forming a second electrode;
• and
• forming a resistance variable material layer between the first and second electrodes, the first electrode formed electrically coupled to the resistance variable material.

A method of forming a memory element, the method comprising the acts of:

• providing a substrate;
• forming a conductive line over the substrate;
• forming an insulating layer over the substrate;
• forming a metal plug within the insulating layer and electrically coupled to the conductive line;
• forming an anodic aluminum oxide layer over the metal plug;
• forming a plurality of conductive nanotubes within the anodic aluminum oxide layer such that at least one nanotube is electrically coupled to the metal plug;
• forming at least one resistance variable material layer over the anodic aluminum oxide layer;
• and
• forming a second electrode over the at least one resistance variable material layer.

A method of forming a memory element, the method comprising the acts of:

• providing a substrate;
• forming a conductive line over the substrate;
• forming an insulating layer over the substrate;
• forming a metal plug within the insulating layer and electrically coupled to the conductive line;
• forming an anodic aluminum oxide layer over the metal plug;
• forming a plurality of conductive nanowires within the anodic aluminum oxide layer such that at least one nanowire is electrically coupled to the metal plug;
• forming at least one resistance variable material layer over the anodic aluminum oxide layer;
• and
• forming a second electrode over the at least one resistance variable material layer.