Thermal type infrared ray imaging device and fabrication method thereof
AssigneeKabushiki Kaisha Toshiba
InventorsKeitaro Shigenaka, Naoya Mashio
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Abstract
A fabrication method of a thermal type infrared ray imaging device that includes forming a plurality of diodes in a single crystal silicon layer as first and second thermoelectric conversion parts constituting a thermoelectric conversion part; forming input and output wirings to be connected to a plurality of cells; forming a plurality of opening portions which expose the single crystal silicon substrate; forming a first photothermal conversion layer; and removing selectively a portion of the single crystal silicon substrate via the plurality of opening portions.
Claims18
A thermal type infrared ray imaging device, comprising:
- a plurality of cells arranged on a substrate each having a photothermal conversion part which converts an infrared ray into heat, and a thermoelectric conversion part which is provided below said photothermal conversion part and which converts the heat generated by said photothermal conversion part into an electric signal;
- a selection part which selects some cells among said plurality of cells;
- and
- an output part which outputs the electric signal generated by said thermoelectric conversion part of each of the selected cells,
- wherein said photothermal conversion part includes:
- a first photothermal conversion layer;
- and
- a second photothermal conversion layer provided over and apart from said first photothermal conversion layer, which converts an infrared ray within a waveband different from a waveband of said first photothermal conversion layer into heat,
- wherein said thermoelectric conversion part includes:
- a first thermoelectric conversion part which converts the heat generated by said first photothermal conversion layer into the electric signal;
- and
- a second thermoelectric conversion part which is thermally separated from said first thermoelectric conversion part, and which converts the heat generated by said second photothermal conversion layer into the electric signal.
A thermal type infrared ray imaging device, comprising:
- a plurality of cells arranged on a substrate each having a photothermal conversion part which converts an incident infrared ray into heat, and a thermoelectric conversion part which is provided below said photothermal conversion part and which converts the heat generated by said photothermal conversion part into an electric signal;
- a selection part which selects some cells among said plurality of cells;
- and
- an output part which outputs the electric signal generated by said thermoelectric conversion part of each of the selected cells;
- wherein said photothermal conversion part has a plurality of photothermal conversion layers which convert infrared rays within different wavebands into heat, said photothermal conversion layers being disposed apart from each other in a vertical direction;
- and
- said thermoelectric conversion part has a plurality of thermoelectric conversion parts which convert the heat generated by said plurality of photothermal conversion layers into the electric signals.
18-20. (canceled)
Dependencies are inferred from the claim text.