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US 2006/0131481 A1Published application
CMOS image sensor having pinned diode floating diffusion region
AssigneeMicron Technology, Inc.
InventorSungkwon Hong
Life of this patent
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Abstract
The present invention provides an image sensor having a pinned floating diffusion region in addition to a pinned photodiode. The pinned floating diffusion region increases the capacity of the sensor to store charge, increases the dynamic range of the sensor and widens intra-scene intensity variation.
Claims14
1-67. (canceled)
A method of forming a pixel sensor cell comprising:
- forming said pixel sensor cell having a photoconversion device and a charge collection region, said charge collection region having a first doped region of a first conductivity type:
- forming a second doped region associated with said charge collection region having a second conductivity type;
- forming a contact connected to said charge collection region;
- and
- etch implanting a third doped region having said first conductivity type under said contact and associated with said charge collection region.
2 more elements
Dependencies are inferred from the claim text.