Method of manufacturing a semiconductor device

A manufacturing method of a semiconductor device, comprising the steps of:

• (a) preparing a semiconductor wafer which has a main surface, a back surface opposite to the main surface, and an integrated circuit formed on the main surface;
• (b) arranging a plurality of electrodes at a first interval over the main surface of the semiconductor wafer;
• (c) forming a first insulating layer which covers the electrode and includes an opening exposing part of the electrode;
• (d) forming a plurality of wirings each end of which is electrically connected to one of the electrodes, over the first insulating layer so that each of the other end portions in the wirings may be arranged at a second interval larger than the first interval;
• (e) forming a second insulating layer which covers the wirings and includes an opening exposing each of the other end portions in the wirings;
• (f) forming a third insulating layer between the respective other end portions of the wirings which adjoin each other;
• (g) after the step (f), applying a soldering paste material with a printing method over the each of the other end portions of the wirings;
• and
• (h) forming a projection electrode by heating, melting and hardening the soldering paste material.