Dry etching method and apparatus for performing dry etching
AssigneeDongbuAnam Semiconductor Inc.
InventorSang-Kwon Kim
Life of this patent
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Abstract
A dry etching method includes loading a wafer on a lower electrode having at least two cooling paths. Cooling fluids having different temperatures are supplied to each of the cooling paths of the lower electrode so that the multiple cooling paths are at different temperatures from one another. The wafer is etched during cooling.
Claims18
A dry etching method comprising:
- loading a wafer on a lower electrode having at least two cooling paths;
- supplying cooling fluids having different temperatures to each of the cooling paths of the lower electrode so that the multiple cooling paths are at different temperatures from one another;
- and
- etching the wafer.
An apparatus for performing dry etching, comprising:
- an etching chamber;
- a lower electrode defining at least two cooling paths disposed in the etching chamber;
- an upper electrode configured to convert process gases into plasma, the upper electrode disposed above the lower electrode;
- and
- a fluid supply device configured to supply cooling fluids having different predetermined temperatures to the cooling paths.
The apparatus according to 7, wherein the fluid supply device comprises three inflow pipes configured to deliver the cooling fluids to central, edge and middle portions of the lower electrode, the middle portion located between the central and edge portions.
The apparatus according to 8, wherein a temperature of the cooling fluid supplied to the edge portion is higher than a temperature of the cooling fluid supplied to the middle portion, and the temperature of the cooling fluid supplied to the middle portion is higher than a temperature of the cooling fluid supplied to the central portion.
A method of etching a semiconductor, comprising:
- cooling a first portion of the semiconductor to a first temperature;
- cooling a second portion of the semiconductor to a second temperature;
- and
- etching a layer of the semiconductor during cooling of the first and second portions.
An etching apparatus, comprising:
- an etching chamber;
- an upper electrode disposed in an upper portion of the etching chamber;
- a lower electrode disposed in a lower portion of the etching chamber opposite the upper electrode, the lower electrode defining first and second cooling paths;
- and
- a first fluid supply device configured to supply a first coolant at a first temperature to the first cooling path;
- and
- a second fluid supply device configured to supply a second coolant at a second temperature to the second cooling path.
Dependencies are inferred from the claim text.