Apparatus for generating plasma by RF power
AssigneeApplied Materials, Inc.
InventorsYu Chang, Gwo-Chuan Tzu, Salvador Umotoy, Chien-Teh Kao, William Kuang, Xiaoxiong Yuan, Mei Chang
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AssigneeApplied Materials, Inc.
InventorsYu Chang, Gwo-Chuan Tzu, Salvador Umotoy, Chien-Teh Kao, William Kuang, Xiaoxiong Yuan, Mei Chang
Estimating the term…
A method and apparatus for processing a substrate is provided. In one aspect, the chamber comprises a chamber body and a support assembly at least partially disposed within the chamber body adapted to support a substrate thereon. The chamber further comprises a lid assembly disposed on an upper surface of the chamber body. The lid assembly includes a top plate and a gas delivery assembly which define a plasma cavity therebetween, wherein the gas delivery assembly is adapted to heat the substrate. A remote plasma source having a U-shaped plasma region is connected to the gas delivery assembly.
A processing chamber for a substrate, comprising:
A processing chamber for a substrate, comprising:
A processing chamber for a substrate, comprising:
Dependencies are inferred from the claim text.