Substrate processing system for performing exposure process in gas atmosphere

A substrate processing system which sprays exposure process gas onto a substrate disposed within a chamber.

• the chamber having at least one gas inlet and at least one gas outlet,
• said system comprising:
• a gas introducing means which introduces the exposure process gas into the chamber via the gas inlet;
• and
• a gas distributing means,
• wherein the gas distributing means separates an inner space of the chamber into a first space into which the exposure process gas is introduced via the gas inlet and a second space in which the substrate is disposed,
• the gas distributing means has a plurality of openings via which the first and second spaces communicate with each other, and introduces the exposure process gas introduced into the first space, into the second space via the openings,
• the exposure process is carried out with a pressure in the chamber being kept in the range of −50 KPa to +50 KPa both inclusive, wherein an atmospheric pressure is assumed equal to 0 KPa.

A substrate processing system which sprays exposure process gas onto each of a pluality of substrates horizontally disposed and vertically spaced away from one another in a chamber,

• the chamber having at least one gas inlet and at least one gas outlet,
• said system comprising:
• a gas introducing means which introduces the exposure process gas into the chamber via the gas inlet;
• and
• a plurality of gas distributing means each associated with each of the plurality of substrates,
• wherein each of the gas introducing means having a plurality of openings, wherein the exposure process gas having been introduced via the gas introducing means is sprayed onto an associated substrate via the opening, and
• the exposure process is carried out with a pressure in the chamber being kept in the range of −50 KPa to +50 KPa both inclusive, wherein an atmospheric pressure is assumed equal to 0 KPa.

A substrate processing system which sprays exposure process gas onto a substrate disposed within a chamber,

• the chamber having at least one gas inlet and at least one gas outlet,
• said system comprising:
• a gas introducing means which introduces the exposure process gas into the chamber via the gas inlet;
• and
• a gas distributing means,
• wherein the gas distributing means separates an inner space of the chamber into a first space into which the exposure process gas is introduced via the gas inlet and a second space in which the substrate is disposed,
• the gas distributing means has a plurality of openings via which the first and second spaces communicate with each other, and introduces the exposure process gas introduced into the first space, into the second space via the openings,
• the gas distributing means is in the form of a plate, and is rotatable around a center thereof,
• the exposure process is carried out with a pressure in the chamber being kept in the range of −50 KPa to +50 KPa both inclusive, wherein an atmospheric pressure is assumed equal to 0 KPa.

A substrate processing system which sprays exposure process gas onto a substrate disposed within a chamber,

• the chamber having at least one gas inlet and at least one gas outlet,
• said system comprising:
• a gas introducing means which introduces the exposure process gas into the chamber via the gas inlet;
• and
• a gas sprayer which sprays the exposure process gas having been introduced into the chamber, onto the substrate,
• wherein the gas sprayer is movable in the chamber, and
• the exposure process is carried out with a pressure in the chamber being kept in the range of −50 KPa to +50 KPa both inclusive, wherein an atmospheric pressure is assumed equal to 0 KPa.