Low temperature load and bake

A system for chemical vapor deposition on a semiconductor substrate, comprising:

• a plasma source connected to feed plasma products within a single wafer reaction chamber;
• a susceptor housed within the reaction chamber;
• a robot configured to transfer a hydrogen-terminated substrate into and out of the reaction chamber;
• a plurality of heating elements configured to heat the substrate upon the susceptor;
• and
• a computer programmed to first control the robot, heating elements and plasma source to conduct plasma cleaning of the reaction chamber at a temperature less than that at which hydrogen will desorb from the substrate;
• second load the substrate onto the susceptor in the chamber at a temperature less than that at which hydrogen will desorb from the substrate after conducting plasma cleaning;
• and third conduct a chemical vapor deposition upon the substrate.

A system for chemical vapor deposition on a semiconductor substrate, comprising:

• a cold wall reaction chamber;
• a susceptor housed within the reaction chamber;
• a robot configured to transfer a substrate into and out of the reaction chamber;
• a plurality of heating elements configured to heat the substrate upon the susceptor, the plurality of heating elements comprising an upper bank of lights and a lower bank of lights;
• and
• a computer programmed to control the robot and the plurality of heating elements to:
• load the substrate onto the susceptor in the chamber;
• deliver a greater ratio of power during a bake step to the upper bank of lamps as compared to a neutral ratio of power between the upper bank and the lower bank of lamps, where the neutral ratio of power is optimized to maintain the substrate temperature the same as the susceptor temperature;
• and
• conduct deposition upon the substrate.