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US 2006/0130739 A1Published application
Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device
AssigneeRicoh Company, Ltd.
InventorsSeiji Sarayama, Hisanori Yamane, Masahiko Shimada, Masafumi Kumano, Hirokazu Iwata, Takashi Araki
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Abstract
A group-III nitride crystal growth method comprises the steps of: a) preparing a mixed molten liquid of an alkaline material and a substance at least containing a group-III metal; b) causing growth of a group-III nitride crystal from the mixed molten liquid prepared in the step a) and a substance at least containing nitrogen; and c) creating a state in which nitrogen can be introduced into the molten liquid prepared by the step a).
Claims11
A group-III nitride crystal growth method comprising the steps of:
- a) preparing a mixed molten liquid of an alkaline metal and a substance at least containing a group-III metal;
- b) causing growth of a group-III nitride crystal from the mixed molten liquid prepared in said step a) and a substance at least containing nitrogen;
- and
- c) creating a state in said step b) in which nitrogen can be introduced into the molten liquid prepared by said step a);
- wherein at least one of the purity of the alkaline metal used in said step a), the purity of the molten liquid prepared in said step a), and the purity of the substance at least containing nitrogen used in said step b) is so high that at least a part of the surface of the mixed molten liquid used in said step b) is free from being covered by polycrystalline or amorphous group-III nitride.
2 more elements
(canceled)
-39. (canceled)
-82. (canceled)
Dependencies are inferred from the claim text.