Semiconductor inspection device and method for manufacturing contact probe
OwnerKei Marayamainventor
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Abstract
A semiconductor inspection device for inspecting an electronic device is disclosed. The semiconductor inspection device includes a contact probe including a plurality of column parts disposed in continuation, each of the column parts having different height, a conductive layer formed at least on the surfaces of the column parts, a holding part for holding the contact probe, and a through-hole electrode penetrating at least one of the column parts, wherein the contact probe and the holding part are integrally formed from a single silicon substrate.
Claims3
A method of manufacturing a contact probe including N column parts disposed in continuation, each of the column parts having different height, the N column parts being supported by a holding part, the method comprising the steps of:
- a) forming an N-1th resist film on a portion of the silicon substrate corresponding to a position of the holding part and a portion of the silicon substrate corresponding to a position of an N-1th column part;
- b) forming an Nth resist film on the N-1th resist film and a portion of the silicon substrate corresponding to a position of an Nth column part, the Nth resist film having a property different from that of the N-1th resist film;
- c) repeating the steps a) and b);
- d) etching a predetermined area to a predetermined depth by using the Nth resist film as a mask and then removing the Nth resist film;
- e) repeating the step d);
- and
- f) forming a conductive layer at least on the surfaces of the first to Nth column parts.
A method of manufacturing a contact probe including first to fourth column parts disposed in continuation, each of the column parts having different height, the first to fourth column parts being supported by a holding part, the method comprising the steps of:
- a) forming a first resist film on a portion of a silicon substrate corresponding to the holding part and a portion of the silicon substrate corresponding to a position of the first column part;
- b) forming a second resist film on the first resist film and a portion of the silicon substrate corresponding to a position of the second column part, the second resist film having a property different from that of the first resist film;
- c) forming a third resist film on the second resist film and a portion of the silicon substrate corresponding to a position of the third column part, the third resist film having a property different from that of the second resist film;
- d) forming a fourth resist film on the third resist film and a portion of the silicon substrate corresponding to a position of the fourth column part, the fourth resist film having a property different from that of the third resist film;
- e) etching a first area to a first depth by using the fourth resist film as a mask and then removing the fourth resist film;
- f) etching a second area to a second depth by using the third resist film as a mask and then removing the third resist film;
- g) etching a third area to a third depth by using the second resist film as a mask and then removing the second resist film;
- h) etching a fourth area to a fourth depth by using the first resist film as a mask;
- and
- i) forming a conductive layer at least on the surfaces of the first to fourth column parts and filling a through-hole formed by executing step h) with a conductive material.
Dependencies are inferred from the claim text.