Frequency filter and its manufacturing process
AssigneeCommissariat a l'Energie Atomique
InventorsFrancois Baleras, Pierre Blondy
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AssigneeCommissariat a l'Energie Atomique
InventorsFrancois Baleras, Pierre Blondy
Estimating the term…
The invention relates to a frequency filter comprising a structure with, on one face, two extreme evanescent areas and at least one wave guide area between the evanescent areas, characterised in that the at least one wave guide area and the evanescent areas form a single closed cavity, the said single cavity being partitioned by at least two resonator elements that are embedded in the said single cavity at placement areas and that contribute to delimiting the said at least one wave guide area and the evanescent areas. The invention also relates to a process for manufacturing at least one such frequency filter, the said process comprising the following steps: manufacture of a structure comprising at least one cavity on one of its faces, called the back face, embedment of at least two resonator elements in the cavity at placement areas so as to delimit the at least one wave guide area and the evanescent areas.
Frequency filter comprising a structure with, on one face, two extreme evanescent areas (25) and at least one wave guide area (24) between the evanescent areas, characterised in that the at least one wave guide area (24) and the evanescent areas (25) form a single closed cavity (21), the said single cavity (21) being partitioned by at least two resonator elements (20, 60) that are embedded in the said single cavity (21) at placement areas and that contribute to delimiting the said at least one wave guide area (24) and the evanescent areas (25).
Frequency filter according to the previous claim, characterised in that the resonator elements are made from silicon or ceramic.
Frequency filter according to any one of the previous claims, characterised in that it comprises an electromagnetic shielding, the said shielding comprising:
Frequency filter according to the previous claim, characterised in that the second metallisation layer (31) is deposited on a host substrate (32, 61) with low dielectric losses.
Frequency filter according to the previous claim, characterised in that these openings are made at the resonator elements.
Process for manufacturing at least one frequency filter according to the previous claim, characterised in that it also comprises a metallisation step of the back face (80) of the structure, the walls (22) and the bottom (23) of the cavity before the embedment step of the resonator elements (20, 60), and a step to close the cavity (21) using a metallisation layer (31) after the said embedment step.
Process for manufacturing at least one frequency filter according to the previous claim, characterised in that the metallisation layer used to close the cavity comprises at least two openings.
Process for manufacturing a filter according to the previous claim, characterised in that the first substrate (40) is made from a material with low dielectric losses.
Process for manufacturing a filter according to the previous claim, characterised in that the first substrate (40) is made from a material chosen among silicon, quartz or any other similar material.
Process for manufacturing a filter according to the previous claim, characterised in that the mask used has a pattern to obtain a cavity (21) with at least one protuberant part (200) and at least one setback part (300) in at least one wall (22) and/or the bottom (23) of the cavity (21).
Process for manufacturing a filter according to the previous claim, characterised in that it also comprises a step to adjust the height of the said second substrate (50) after the step to supply the second substrate.
Process for manufacturing a filter according to the previous step, characterised in that the manufacture of resonator elements also includes a step to deposit a metallisation layer (53) on the face(s) of the second substrate (50) comprising a layer of dielectric material (52).
Dependencies are inferred from the claim text.