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US 2006/0125118 A1Published application
Semiconductor device having a bonding pad structure including an annular contact
AssigneeElpida Memory, Inc.
InventorYasushi Yamazaki
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Abstract
A bonding pad structure in a semiconductor device includes a contact pad connected to an interconnect, a bonding pad overlying the contact pad with an intervention of an insulating film and exposed from an opening of a passivation film, and an annular contact disposed between the contact pad and the bonding pad for electric connection therebetween. The annular contact encircles the opening as viewed normal to the substrate surface.
Claims7
A semiconductor device comprising:
- a substrate;
- a first pad overlying said substrate and connected to an interconnect;
- an insulating film formed on said first pad;
- a second pad formed on said insulating film and overlying said first pad;
- a passivation film formed on said second pad and having an opening exposing therethrough at least a central area of said first pad;
- and
- an annular contact disposed within said insulating film between said first pad and said second pad for connecting together said first pad and said second pad, said annular contact encircling said opening as viewed normal to said substrate.
4 more elements
Dependencies are inferred from the claim text.