Method of producing a microelectronic electrode structure, and microelectronic electrode structure
AssigneeInfineon Technologies AG
InventorsMartin Gutsche, Harald Seidl
Life of this patent
Estimating the term…
Abstract
In a method for producing a microelectronic electrode structure a first wiring plane is prepared, an insulating region on the first wiring plane is provided, a through-hole in the insulating region is formed, a ring electrode in the through-hole is formed, and a second wiring plane is formed on the insulating region. The ring electrode comprises a first side and a second side, the ring electrode is electrically connected on the first side to the first wiring plane, and the second wiring plane is electrically connected to the second side of the ring electrode.
Claims24
A method for producing a microelectronic electrode structure comprising the steps of:
- preparing a first wiring plane;
- providing an insulating region on said first wiring plane;
- forming a through-hole in said insulating region;
- forming, by means of a spacer technique, a ring electrode in said through-hole;
- said ring electrode comprising a first side and a second side and said ring electrode being electrically connected on said first side to said first wiring plane;
- and
- forming a second wiring plane on said insulating region;
- said second wiring plane being electrically connected to said second side of said ring electrode.
A microelectronic electrode structure, comprising:
- a first wiring plane;
- an insulating region on said first wiring plane;
- a through-hole in said insulating region;
- a ring electrode in said through-hole;
- said ring electrode comprising a first side and a second side and said ring electrode being electrically connected on said first side to said first wiring plane;
- and
- a second wiring plane on said insulating region, said second wiring plane being electrically connected to said second side of said ring electrode.
Dependencies are inferred from the claim text.