Back end of line integration scheme
OwnerZhen-Cheng Wu, Ying-Tsung Chen +2inventors
InventorsZhen-Cheng Wu, Ying-Tsung Chen, Pi-Tsung Chen, Yung-Cheng Lu
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Abstract
A semiconductor structure comprises: a first inter-layer dielectric (ILD) over a substrate; a first metal layer; a plurality of second ILDs over the first ILD; and a plurality of second metal layers, each of the second metal layers is over one of the second ILDs. The first ILD is not cured. It has a k value of between about 2.5 and about 3.0, a pore size of smaller than about 10 Å, and a hardness of greater than about 1.5 Gpa. The second ILDs are cured therefore having lower k values of smaller than about 2.5, pore sizes of greater than about 10 Å, and hardness of smaller than about 1.5 Gpa. The semiconductor structure has reduced plasma charge damage from plasma curing.
Claims19
A method of forming semiconductor structures, the method comprising the steps of:
- forming a first inter-layer dielectric (ILD);
- forming a first metal layer over the first ILD;
- forming a second ILD over the first metal layer;
- forming a second metal layer over the second ILD;
- and
- curing the second ILD.
A semiconductor structure comprising:
- a first ILD over a substrate;
- a first metal layer over the first ILD;
- a cured second ILD over the first metal layer;
- and
- a second metal layer over the second ILD.
A method of forming semiconductor structures, the method comprising the steps of:
- forming a first uncured inter-layer dielectric (ILD) over a substrate;
- forming a first metal layer over the first ILD;
- forming at least one second ILD over the first ILD, each of the second ILD having one of second metal layer formed over;
- and
- curing at least one of the second ILD.
Dependencies are inferred from the claim text.