Method of manufacturing semiconductor device, and semiconductor device
AssigneeSony Corporation
InventorShinichi Arakawa
Life of this patent
Estimating the term…
Abstract
A method of manufacturing a semiconductor device, comprising a first step of forming a layer insulation film on a lower layer wiring provided on a substrate and forming a connection hole in the layer insulation film, a second step of forming an alloy layer composed of a first metallic material constituting the lower layer wiring and a second metallic material different from the first metallic material, on the surface side of the lower layer wiring in the region to be a bottom portion of the connection hole, a third step of sputter-etching the alloy layer, and a fourth step of forming a via in the connection hole in the state of reaching the lower layer wiring; and the semiconductor device.
Claims16
A method of manufacturing a semiconductor device, comprising:
- a first step of forming an insulation film on a substrate, in the state of covering a wiring provided on said substrate, and forming a connection hole in said insulation film;
- a second step of forming an alloy layer comprised of a first metallic material constituting said wiring and a second metallic material different from said first metallic material, on the surface side of said wiring in a region to be a bottom portion of said connection hole;
- a third step of sputter-etching said alloy layer;
- and
- a fourth step of forming a via in said connection hole in the state of reaching said wiring.
A method of manufacturing a semiconductor device, comprising:
- a first step of forming on a substrate a mask provided with a connection hole pattern, in the state of covering a wiring provided on said substrate, and forming an alloy layer comprised of a first metallic material constituting said wiring and a second metallic material different from said first metallic material, on the surface side of said wiring exposed from said mask;
- a second step of forming an insulation film, on said wiring deprived of said mask or on said mask inclusive of the area on said wiring, and providing said insulation film with a connection hole reaching said alloy layer;
- a third step of sputter-etching said alloy layer;
- and
- a fourth step of forming a via in said connection hole in the state of reaching said wiring.
A semiconductor device comprising:
- a wiring provided on a substrate;
- an insulation film provided on said substrate in the state of covering said wiring;
- and
- a via provided in a connection hole provided in said insulation film, in the state of reaching said wiring, wherein
- an alloy layer comprised of a first metallic material constituting said wiring and a second metallic material different from said first metallic material is provided on the surface side of said wiring, selectively in the region of joint to said via.
Dependencies are inferred from the claim text.