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US 2006/0125099 A1Published application
Vapor deposition of tungsten nitride
AssigneePresident and Fellows of Harvard College
InventorsRoy Gordon, Seigi Suh, Jill Becker
Life of this patent
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AssigneePresident and Fellows of Harvard College
InventorsRoy Gordon, Seigi Suh, Jill Becker
Estimating the term…
Tungsten nitride films were deposited on heated substrates by the reaction of vapors of tungsten bis(alkylimide)bis(dialkylamide) and a Lewis base or a hydrogen plasma. For example, vapors of tungsten bis(tert-butylimide)bis(dimethylamide) and ammonia gas supplied in alternate doses to surfaces heated to 300° C. produced coatings of tungsten nitride having very uniform thickness and excellent step coverage in holes with aspect ratios up to at least 40:1. The films are metallic and good electrical conductors. Suitable applications in microelectronics include barriers to the diffusion of copper and electrodes for capacitors. Similar processes deposit molybdenum nitride, which is suitable for layers alternating with silicon in X-ray mirrors.
1-23. (canceled)
A process for depositing a thin film on a surface of a substrate, the process comprising:
A process for depositing a thin film on a surface of a substrate, the process comprising:
A process for depositing a material, the process comprising:
A compound having a formula
Dependencies are inferred from the claim text.