Transistor device having a delafossite material
OwnerRandy Hoffman, John Wagerinventors
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Abstract
A transistor device includes a channel of p-type substantially transparent delafossite material. Source and drain contacts are interfaced to the channel. Gate dielectric is between a gate contact and the channel.
Claims23
A method of using a transistor device, the transistor device comprising a channel of p-type substantially transparent delafossite material, a source contact interfaced to said channel, a drain contact interfaced to said channel, a gate contact, and a gate dielectric between said gate contact and said channel, the method comprising:
- arranging the transistor device with additional transistor devices;
- providing voltages to said source, drain and gate contacts to induce conduction in said channel.
A method of forming a transistor device, the method comprising:
- in an appropriate sequence for a desired transistor configuration, depositing thin film layers including thin film gate, source, and drain contacts, gate dielectric and a substantially transparent delafossite channel;
- and
- at appropriate times during the appropriate sequence, patterning the thin film layers.
A method of forming a transistor device, the method comprising:
- forming a channel of a p-type substantially transparent delafossite material;
- forming a source contact interfaced to said channel;
- forming a drain contact interfaced to said channel;
- forming a gate contact;
- and
- forming a gate dielectric between said gate contact and said channel.
Dependencies are inferred from the claim text.