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US 2006/0125095 A1Published application
Semiconductor device and manufacturing method thereof
AssigneeSeiko Epson Corporation
InventorTakeshi Yuzawa
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Abstract
A semiconductor device including a semiconductor substrate containing a plurality of electrode pads and a passivation film with an opening that exposes a central area of each of the electrode pads, and a bump electrically connected to each of the electrode pads, the bump being disposed to overlap the opening and an end of the opening, wherein at least part of an area contacting the bump on a surface of the passivation film is an uneven surface.
Claims9
A semiconductor device, comprising:
- a semiconductor substrate containing a plurality of electrode pads and a passivation film with an opening that exposes a central area of one of the electrode pads;
- and
- a bump electrically connected to one of the electrode pads, the bump being disposed to overlap the opening and an end of the opening;
- wherein at least part of an area contacting the bump on a surface of the passivation film is an uneven surface.
1 more element
A method of manufacturing a semiconductor device, the method comprising:
- forming a barrier layer on a semiconductor substrate containing a plurality of electrode pads and a passivation film with an opening that exposes a central area of one of-the electrode pads;
- forming on the barrier layer a conductive material that overlaps the opening of the passivation film and an end of the opening;
- and
- partially removing the barrier layer by etching the barrier layer with the conductive material as a mask;
- wherein at least part of the end of the opening on a surface of the passivation film is an uneven surface.
2 more elements
Dependencies are inferred from the claim text.