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AssigneeShinko Electric Industries Co., Ltd.
InventorsKazumitsu Seki, Takashi Yoshie, Koichi Kadosaki
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Lead frames of a Pd-PPF structure for use in a semiconductor device comprising inner leads and outer leads, wherein a whole surface of the substrate constituting the lead frame or at least the outer leads has a composite plated layer, and the composite plated layer comprises an underlayer consisting of an Ni-based plating layer deposited on the whole surface of the substrate constituting the lead frame or on at least the outer leads, a Pd— or Pd alloy-plating layer deposited at a thickness of 0.005 to 0.01 μm on an upper surface of the underlayer, and an Au-plating layer deposited at a thickness of 0.02 to 0.1 μm on an upper surface of the Pd— or Pd alloy-plating layer. When a semiconductor device is mounted on a packaging substrate by using a lead-free Sn—Zn-based solder or any other lead-free solder, the wettability between the lead frame and the lead-free Sn—Zn-based solder or any other lead-free solder is improved to thereby improve the packaging property of the semiconductor device.
A lead frame for use in a semiconductor device comprising inner leads and outer leads, wherein a whole surface of the substrate constituting the lead frame or at least the outer leads has a composite plated layer applied thereon, and the composite plated layer comprises an underlayer consisting of an Ni-based plating layer deposited on the whole surface of the substrate constituting the lead frame or on at least the outer leads, a Pd— or Pd alloy-plating layer deposited at a thickness of 0.005 to 0.01 μm on an upper surface of the underlayer, and an Au-plating layer further deposited at a thickness of 0.02 to 0.1 μm on an upper surface of the Pd— or Pd alloy-plating layer.
A lead frame for use in a semiconductor device comprising inner leads and outer leads, wherein a whole surface of the substrate constituting the lead frame or at least the outer leads has a composite plated layer applied thereon, and the composite plated layer comprises an underlayer consisting of an Ni-based plating layer deposited on the whole surface of the substrate constituting the lead frame or on at least the outer leads, a Pd— or Pd alloy-plating layer deposited at a thickness of 0.005 to 0.01 μm on an upper surface of the underlayer, and an Ag— or Ag—Au alloy-plating layer of a thickness of not larger than 0.03 μm and an Au-plating layer of a thickness of not larger than 0.03 μm successively deposited on an upper surface of the Pd— or Pd alloy-plating layer.
A lead frame for use in a semiconductor device comprising inner leads and outer leads, wherein a whole surface of the substrate constituting the lead frame or at least the outer leads has a composite plated layer applied thereon, and the composite plated layer comprises an underlayer consisting of an Ni-based plating layer deposited on the whole surface of the substrate constituting the lead frame or on at least the outer leads, a Pd— or Pd alloy-plating layer deposited at a thickness of 0.005 to 0.01 μm on an upper surface of the underlayer, and Ag-plating layers and Au-plating layers each having a thickness of 0.02 to 0.2 μm, alternately deposited on an upper surface of the Pd— or Pd alloyplating layer.
6-8. (canceled)
Dependencies are inferred from the claim text.