Semiconductor device having laminated semiconductor constructions and a manufacturing method thereof
AssigneeCasio Computer Co., Ltd.
InventorIchiro Mihara
Life of this patent
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Abstract
A semiconductor device comprises a plurality of semiconductor constructions being mutually laminated each having a semiconductor substrate and a plurality of external connection electrodes arranged on the semiconductor substrate respectively, an insulating layer formed around the peripheries of the semiconductor constructions, an upper layer insulating film formed on an uppermost one of the semiconductor constructions and the insulating layer, and upper layer wirings arranged on the upper layer insulating film by electrically connecting to the external connection electrodes of semiconductor constructions.
Claims28
A semiconductor device, comprising:
- a plurality of semiconductor constructions being mutually laminated each having a semiconductor substrate and a plurality of external connection electrodes arranged on the semiconductor substrate respectively;
- an insulating layer formed around the peripheries of the semiconductor constructions;
- an upper layer insulating film formed on an uppermost one of the semiconductor constructions and the insulating layer;
- and
- an upper layer wirings arranged on the upper layer insulating film by electrically connecting to the external connection electrodes of semiconductor constructions.
A manufacturing method for semiconductor devices comprising:
- preparing a base plate;
- preparing a plurality of first semiconductor constructions each having a semiconductor substrate and external connection electrodes arranged around the periphery of the semiconductor substrate respectively;
- arranging the first semiconductor constructions on the base plate with mutual separation;
- preparing a plurality of second semiconductor constructions each having a semiconductor substrate, external connection electrodes arranged around the periphery of the semiconductor substrate, and a plane size each of which is smaller than that of each of the first semiconductor constructions;
- arranging one of the second semiconductor constructions on/over each of the first semiconductor constructions, respectively;
- forming an insulating film around peripheries of the first and second semiconductor constructions on the base plate and on the second semiconductor construction, respectively;
- forming upper layer wirings on the insulating film, which is electrically connected to the external connection electrodes of the first and second semiconductor constructions;
- and
- cutting off the insulating film and the base plate between the first semiconductor constructions so as to obtain semiconductor devices where the first and second semiconductor constructions are laminated and provided on the base plate.
A manufacturing method for semiconductor devices comprising:
- preparing first semiconductor constructions having a semiconductor substrate which has an integrated circuit and connection pads connected to the integrated circuit, a protective film formed on the semiconductor substrate and having openings where the connection pads are exposed, the columnar electrodes connected to the connection pads and a sealing film formed between the columnar electrodes on the protective film;
- preparing second semiconductor constructions having a semiconductor substrate which has an integrated circuit and connection pads connected to the integrated circuit, a protective film formed on the semiconductor substrate and having openings where the connection pads are exposed, the columnar electrodes connected to the connection pads, a sealing film formed between the columnar electrodes on the protective film, a plane size of each of the second semiconductor constructions is smaller than that of each of the first semiconductor constructions;
- mounting one of the second semiconductor constructions on/over each of the first semiconductor constructions respectively;
- forming an insulating film on the second semiconductor constructions;
- and
- forming wires on the insulating film connected to the columnar electrodes of the first semiconductor constructions and the second semiconductor constructions.
Dependencies are inferred from the claim text.