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US 2006/0125053 A1Published application
Zener diode and methods for fabricating and packaging same
AssigneeLG Electronics Inc.
InventorsKi Song, Geun Kim
Life of this patent
Estimating the term…
Abstract
A zener diode and methods for fabricating and packaging same are disclosed, whereby contact hole forming process exposing a diffusion layer is removed to enable to simplify the fabricating process, and the diffusion length not contacting the electrode line is determined by the crosswise length toward which the impurity is diffused to enable to reduce the zener impedance value. Furthermore, wet etching is used following the diffusion to remove the diffusion masks such that no damage is given to the diffusion layers to thereby enable to improve the zener diode characteristics.
Claims17
A zener diode fabricating method comprising:
- sequentially forming insulation films and mask layers on top and bottom of a substrate having a first polarity;
- sequentially etching part of the mask layer on top of the substrate and the insulation film to form a pair of openings through which the substrate is exposed;
- implementing a diffusion process by introducing an impurity having a second polarity opposite to that of the first polarity into the substrate to form diffusion layers having the second polarity at a substrate region exposed through a pair of openings;
- removing the mask layer on top of the substrate to expose the insulation film, and exposing the mutually spaced diffusion layers through the openings of the insulation film;
- and
- forming a pair of electrode lines each electrically connected to the exposed diffusion layers.
3 more elements
A zener diode fabricating method comprising:
- sequentially forming an insulation film and a mask layer on top and bottom of a substrate having a first polarity;
- sequentially etching part of the mask layer on top of the substrate and the insulation film to form an opening through which the substrate is exposed;
- implementing a diffusion process by introducing an impurity having a second polarity opposite to that of the first polarity into the substrate to form diffusion layers having the second polarity at a substrate region exposed by the opening;
- removing the mask layer on top of the substrate to expose the insulation film, and exposing the diffusion layers through the opening of the insulation film;
- etching an insulation film spaced apart from the opening to form another opening through which the substrate is exposed;
- forming on top of the insulation film a pair of electrode lines each electrically connected to the diffusion layers exposed through the openings and the substrate;
- and
- forming a pair of electrode lines each electrically connected to the exposed diffusion layers.
5 more elements
A zener diode fabricating method comprising:
- sequentially forming insulation films on top and bottom of a substrate having a first polarity;
- etching part of a mask layer on top of the substrate to form a pair of openings through which the substrate is exposed;
- introducing an impurity having a second polarity opposite to that of the first polarity into the substrate and implementing a diffusing process, and forming diffusion layers having the second polarity at a substrate region exposed through a pair of openings, forming property-changed layers on top and bottom of the mask layer, and forming an insulation film on the surface of the diffusion layers;
- removing the property-changed layers formed on the top of the mask layer and the insulation film formed on the surface of the diffusion layers;
- and
- forming on top of the insulation film a pair of electrode lines each electrically connected to the exposed diffusion layers.
3 more elements
A zener diode fabricating method comprising:
- sequentially forming an insulation film and a mask layer on top and bottom of a substrate having a first polarity, sequentially etching part of the mask layer and the insulation film to form a pair of openings through which the substrate is exposed, forming diffusion layers having a second polarity on a substrate region through which a pair of openings are exposed, removing the mask layer on top of the substrate to expose the insulation film and exposing the mutually spaced diffusion layers through the openings of the insulation film, and forming a pair of electrode lines each electrically connected to the exposed diffusion layers to fabricate a device;
- preparing a Printed Circuit Board (PCB) packaged with first and second electrode terminals thereon and a Light Emitting Device (LCD) formed thereon, bonding the device to top of the PCB;
- wire-bonding a first electrode terminal of the PCB to an electrode line of the device, wire-bonding an electrode line of the device to an electrode terminal of the LED, wire-bonding a second electrode terminal of the PCB to the other electrode terminal of the LED, and wire-bonding the other electrode terminal of the LED to the other electrode line of the device.
A zener diode packaging method comprising:
- sequentially forming an insulation film and a mask layer on top and bottom of a substrate having a first polarity, sequentially etching part of the mask layer and the insulation film to form a pair of openings through which the substrate is exposed, forming diffusion layers having a second polarity on a substrate region through which a pair of openings are exposed, removing the mask layer on top of the substrate to expose the insulation film and exposing the diffusion layers through the openings of the insulation film, and forming a pair of electrode lines each electrically connected to the exposed diffusion layers to fabricate a device;
- packaging the device to a Printed Circuit Board (PCB) formed thereon with first and second electrode terminals;
- flip-chip bonding a Light Emitting Device (LED) to two electrode lines of the device;
- and
- wire-bonding the first electrode terminal to an electrode line of the device, and wire-bonding the other electrode line of the device to the second electrode terminal of the PCB.
2 more elements
A zener diode comprising:
- a substrate having a first polarity;
- a diffusion layer formed from top of the substrate to an inside of the substrate and having a second polarity;
- a mask layer having a first opening through which the diffusion layer is exposed and a second opening through which part of the top of the substrate is exposed;
- a first electrode line electrically connected to the diffusion layer through the first opening, and formed on top of the mask layer;
- and
- a second electrode line electrically connected to the substrate through the second opening, and formed on the top of the mask layer.
3 more elements
A zener diode comprising:
- a substrate having a first polarity;
- a pair of diffusion layers formed from top of the substrate to an inside of the substrate, each spaced apart and having a second polarity;
- a mask layer having openings through which the pair of diffusion layers are exposed;
- and
- first and second electrode lines electrically connected to the diffusion layers through the openings, and formed on top of the mask layer.
2 more elements
Dependencies are inferred from the claim text.