Integrated semiconductor device and method of manufacturing the same
AssigneeHitachi, Ltd.
InventorHiroshi Miki
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Abstract
An integrated semiconductor device comprising an analog integrated circuit or mixed signal integrated circuit having a capacitor, wherein the dielectric film of the capacitor is a laminated film consisting of a first dielectric film essentially composed of aluminum oxide and a second dielectric film essentially composed of crystallized niobium oxide. This integrated semiconductor device is small in size and has a low temperature coefficient and high reliability. The niobium oxide is crystallized to increase its dielectric constant and reduce its loss. To reduce the temperature coefficient, the film thickness ratio of the aluminum oxide layer to the niobium oxide layer is set to 0.2 to 1, preferably 0.4 to 0.7.
Claims20
An integrated semiconductor device comprising an analog integrated circuit or mixed signal integrated circuit having a capacitor, wherein the dielectric film of the capacitor is a laminated film consisting of a first dielectric film essentially composed of aluminum oxide and a second dielectric film essentially composed of crystallized niobium oxide.
An integrated semiconductor device comprising a capacitor having a temperature coefficient of capacitance of +100 ppm/° C. or less, wherein
- the dielectric film of the capacitor is a laminated film consisting of a first dielectric film essentially composed of aluminum oxide and a second dielectric film essentially composed of crystallized niobium oxide.
A method of manufacturing an integrated semiconductor device comprising an analog integrated circuit or mixed signal integrated circuit having a MIM capacitor, wherein the step of forming the dielectric film of the capacitor includes the step of forming a laminated film consisting of an aluminum oxide film and a niobium oxide film on the bottom electrode essentially composed of a metal of the capacitor formed on a substrate and the step of thermally annealing the substrate having the laminated film at 450° C. or lower in an oxidative atmosphere.
Dependencies are inferred from the claim text.