Interposer including at least one passive element at least partially defined by a recess formed therein, system including same, and wafer-scale interposer

A wafer-scale interposer, comprising:

• a plurality of interposers, each comprising a substrate including at least one dielectric layer and at least one conductive layer;
• at least one recess formed in the at least one dielectric layer of each of the plurality of interposers;
• wherein each of the plurality of interposers includes at least one passive element positioned at least partially within the at least one recess formed in the at least one dielectric layer thereof, respectively;
• and
• wherein at least one dimension of the at least one recess are selected for producing an intended magnitude of at least one electrical property of a passive element positioned at least partially therein during operation.

A system, comprising:

• at least one semiconductor package, comprising:
• an interposer comprising:
• a substrate including at least one dielectric layer;
• at least one recess formed in the at least one dielectric layer;
• at least one passive element disposed at least partially within the at least one recess formed in the at least one dielectric layer;
• wherein at least one dimension of the at least one recess is selected for forming the at least one passive element which exhibits at least one intended magnitude of at least one electrical property;
• and
• at least one conductive layer extending in a superimposed relationship along at least a portion of a surface of the at least one dielectric layer;
• and
• a semiconductor die operably connected to the interposer;
• and
• at least one microprocessor operably connected to the semiconductor package.