Transistor using impact ionization and method of manufacturing the same

A method of manufacturing a transistor using impact ionization, the method comprising:

• forming a gate dielectric layer on a semiconductor substrate;
• forming a gate on the gate dielectric layer;
• forming a first spacer and a second spacer on opposite sidewalls, respectively, of the gate;
• forming a first impurity layer spaced from the first spacer and a second impurity layer expanding to overlap with the second spacer therebelow by performing slant ion-implantation on the semiconductor substrate using the gate and the first and second spacers as a mask;
• and
• forming a source and a drain on the semiconductor substrate to be self-aligned with the first and second spacers, respectively, thereby defining an ionization region between the source and the drain in the semiconductor substrate,
• wherein the source comprises a first silicide layer to form a schottky junction with the ionization region, and
• the drain comprises a portion of the second impurity layer overlapping with the second spacer and a second silicide layer which is aligned with the second spacer to form an ohmic contact with the second impurity layer.