Cobalt silicide schottky diode on isolated well

A complimentary complementary metal-oxide-semiconductor integrated circuit (CMOS IC) device formed on a substrate having an upper surface, wherein the CMOS IC device comprises:

• a buried N-well formed in the substrate;
• an isolated P-well formed in the buried N-well;
• a third well separated from the buried N-well and isolated P-well;
• a Schottky diode formed on the upper surface entirely over the isolated P-well, the Schottky diode including:
• a Schottky barrier structure and a backside contact structure formed on the upper surface over first and second doped regions of the substrate, respectively, and
• an isolation structure formed on the upper surface and located between the Schottky barrier and backside contact structures over a third doped region of the substrate;
• and
• a field effect transistor (FET) formed on the upper surface entirely over the third well, the FET including:
• first and second terminal structures formed on the upper surface of the substrate over fifth and sixth doped regions of the substrate, respectively, and
• a gate structure formed on the upper surface of the substrate and located between the first and second terminal structures,
• wherein each of the Schottky barrier structure, the backside contact structure, and the first and second terminal structures comprise a cobalt silicide structure contacting an associated region of the upper surface.

A method for fabricating a complimentary complementary metal-oxide-semiconductor integrated circuit (CMOS IC) device on a substrate having an upper surface, wherein the method comprises:

• forming a buried N-well in the substrate;
• forming an isolated P-well in the substrate such that the isolated P-well is substantially surrounded by the buried N-well;
• forming a Schottky barrier structure and a backside contact structure on the upper surface over first and second regions of the isolated P-well, respectively, and an isolation structure between the Schottky barrier and backside contact structures over a third region of the isolated P-well,
• wherein forming the Schottky barrier structure and a backside contact structure comprises forming first and second cobalt silicide structures over the first and second regions, respectively.