Back-illuminated type solid-state imaging device
AssigneeSony Corporation
InventorKeiji Mabuchi
Life of this patent
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Abstract
A back-illuminated type solid-state imaging device is provided in which an electric field to collect a signal charge (an electron, a hole and the like, for example) is reliably generated to reduce a crosstalk. The back-illuminated type solid-state imaging device includes a structure 34 having a semiconductor film 33 on a semiconductor substrate 31 through an insulation film 32, in which a photoelectric conversion element PD that constitutes a pixel is formed in the semiconductor substrate 31, at least part of transistors 15, 16, and 19 that constitute the pixel is formed in the semiconductor film 33, and a rear surface electrode 51 to which a voltage is applied is formed on the rear surface side of the semiconductor substrate 31.
Claims18
A back-illuminated type solid-state imaging device comprising a semiconductor layer on a semiconductor substrate through an insulation film,
- wherein a photoelectric conversion element that constitutes a pixel is formed in said semiconductor substrate;
- at least part of transistors that constitute said pixel is formed in said semiconductor film;
- and
- a rear surface electrode to which a voltage is applied is formed on the rear surface side of said semiconductor substrate.
A method for manufacturing a back-illuminated type solid-state imaging device, comprising the steps of:
- preparing a substrate having a semiconductor film on a semiconductor substrate through an insulation film,
- forming in said semiconductor substrate a photoelectric conversion element that constitutes a pixel;
- forming in said semiconductor film at least part of transistors that constitute a pixel;
- and
- forming on the rear surface side of said semiconductor substrate a rear surface electrode to which a voltage is applied.
Dependencies are inferred from the claim text.