Loading patent…
OwnerKazuhiro Ohba, Masanori Hosomi +6inventors
InventorsKazuhiro Ohba, Masanori Hosomi, Kazuhiro Bessho, Tetsuya Mizuguchi, Yutaka Higo, Tetsuya Yamamoto, Takeyuki Sone, Hiroshi Kang
Estimating the term…
There are provided a magnetoresistive device having excellent magnetic properties and a magnetic memory apparatus including this magnetoresistive device and which has excellent read and write characteristics. A magnetoresistive device has an arrangement including a pair of ferromagnetic layers (magnetization fixed layer 5 and magnetization free layer 7) being opposed to each other through an intermediate layer 6 to obtain variations in magnetoresistance by an electric current flowing in the direction perpendicular to the film plane. This magnetoresistive device 1 has the pair of ferromagnetic layers 5, 7 composed of the magnetization fixed layer 5 made of a crystalline ferromagnetic layer provided under the intermediate layer 6 and the magnetization free layer 7 being made of an amorphous ferromagnetic layer being provided above the intermediate layer 6, and the magnetic memory apparatus is composed of this magnetoresistive device 1 and a bit line and a word line sandwiching the magnetoresistive device 1 in the thickness direction.
In a magnetoresistive device having a pair of ferromagnetic layers opposed to each other to obtain variations in magnetoresistance by an electric current flowing to the direction perpendicular to the film plane, a magnetoresistive device characterized in that said pair of ferromagnetic layers is composed of a magnetization fixed layer made of a crystalline ferromagnetic layer provided under said intermediate layer and a magnetization free layer being made of an amorphous ferromagnetic layer being provided above said intermediate layer.
A magnetic memory apparatus comprising:
Dependencies are inferred from the claim text.