Hybrid ALD-CVD of PrxOy/ZrO2 films as gate dielectrics

A method comprising:

• forming a memory array in a substrate including:
• forming a dielectric layer containing nanolaminate interleaved dielectric layers of praseodymium oxide and zirconium oxide layers in an integrated circuit including forming the praseodymium oxide and zirconium oxide layers by at least one of an atomic layer deposition and a metallo-organic chemical vapor deposition;
• and
• depositing a conductive layer contacting the dielectric layer;
• and
• forming an address decoder in the substrate, the address decoder coupled to the memory array.

A method comprising:

• providing a controller;
• coupling an integrated circuit to the controller, wherein the integrated circuit includes a dielectric layer contacting a conductive layer, the dielectric comprising a nanolaminate of interleaved dielectric layers of praseodymium oxide and zirconium oxide layers, wherein forming the dielectric layer contacting the conductive layer includes:
• forming the nanolaminate dielectric layer by at least one of and atomic layer deposition and a metallo-organic chemical vapor deposition;
• and
• depositing the conductive layer such that the conductive layer contacts the dielectric layer.

A system comprising:

• a controller;
• an electronic device coupled to the controller, wherein the electronic device includes:
• a dielectric layer comprising an atomic layer deposited nanolaminate of interleaved dielectric layers of praseodymium oxide and zirconium oxide in an integrated circuit;
• and
• a conductive layer contacting the dielectric layer.