Nonvolatile flash memory with HfO2 nanocrystal
AssigneeNational Applied Research Laboratories
InventorsChao-Hsin Chien, Ching-Tzung Lin, Yu-Hsien Lin, Chun-Yon Cheng, Tan-Fu Loi
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Abstract
In the present invention, an Hf-silicate film with small nanocrystal of high density is grown through a Rapidly Temperature Annealing (RTA) process, where its manufacturing procedure is simple and can be integrated into modern IC manufacturing procedure to be applied in related industries of memory and semiconductor, such as flash memory, nonvolatile memory, and so on, without extra equipment or process.
Claims42
A nonvolatile flash memory with HfO2 nanocrystal, at least comprising:
- a substrate;
- a hafnium-silicate (Hf-silicate) film deposed on said
- substrate;
- and
- a control gate layer formed on said Hf-silicate film.
A nonvolatile flash memory with HfO2 nanocrystal, at least comprising:
- a substrate;
- a tunnel oxide grown at the center on an end surface of said substrate by using a vertical furnace;
- an Hf-silicate film formed on said tunnel oxide;
- a blocking oxide deposited on said Hf-silicate film by way of Plasma Enhance Chemical Vapor Deposition;
- and
- a control gate layer formed on said blocking oxide.
A nonvolatile flash memory with HfO2 nanocrystal, at least comprising:
- a substrate;
- a tunnel oxide grown at the center on an end surface of said substrate;
- an Hf-silicate film formed on said tunnel oxide;
- a blocking oxide formed on said Hf-silicate film;
- a polysilicon formed on said blocking oxide;
- and
- an interval layer formed at two sides of said tunnel oxide, said Hf-silicate film, said blocking oxide, and said polysilicon.
A nonvolatile flash memory with HfO2 nanocrystal, at least comprising:
- a substrate including a first Si layer on a SiO2 layer and a second Si layer grown at the center on an end surface of said SiO2 layer;
- a tunnel oxide formed at two sides on an end surface of said SiO2 layer and upon said second Si layer;
- an Hf-silicate film formed on said tunnel oxide;
- a hard mask formed on an end surface between said tunnel oxide and said Hf-silicate film;
- a blocking oxide formed on said Hf-silicate film;
- and
- a control gate layer formed on said blocking oxide,
- wherein a plurality of control gates is formed in a way of chemical mechanical polishing (CMP) on said control gate layer by removing the part of said control gate layer which is right upon an end surface of said blocking oxide.
Dependencies are inferred from the claim text.