Diode with low junction capacitance

A diode comprising:

• a doped region formed with a first dopant of a first conductivity type;
• and
• a substrate abutting the doped region and doped with a second dopant of a second conductivity type opposite of the first conductivity type,
• wherein a first dopant concentration of the doped region is at least 103 times greater than a second dopant concentration of the substrate.

A system for ESD (electro-static discharge) protection of an integrated circuit fabricated within a substrate, the system comprising:

• a first cascade of at least one diode coupled to a node of the integrated circuit for dissipating positive charge at the node from ESD;
• and
• a second cascade of at least one diode coupled to the node of the integrated circuit for dissipating negative charge at the node from ESD;
• wherein at least one diode of the first and second cascades comprises:
• a doped region formed with a first dopant of a first conductivity type;
• and
• the substrate doped with a second dopant of a second conductivity type opposite of the first conductivity type,
• wherein the substrate, instead of a well, abuts the doped region for minimizing a junction capacitance of the diode.