Semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorRyuji Ohba
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Abstract
A semiconductor device includes a semiconductor region having a source region, a drain region, and a channel region provided between the source region and the drain region, a first tunnel insulation film formed on the channel region, a barrier layer formed on the first tunnel insulation film and having an energy barrier, a second tunnel insulation film formed on the barrier layer, a charge storage portion formed on the second tunnel insulation film and comprising an insulation film expressed by SiY(SiO2)X(Si3N4)1-XMZ (where, M denotes an element other than Si, O, and N, and 0≦X≦1, Y>0, and Z≧0), and a control electrode formed on the charge storage portion and controlling a height of the energy barrier.
Claims23
A semiconductor device comprising:
- a semiconductor region having a source region, a drain region, and a channel region provided between the source region and the drain region;
- a first tunnel insulation film formed on the channel region;
- a barrier layer formed on the first tunnel insulation film and having an energy barrier;
- a second tunnel insulation film formed on the barrier layer;
- a charge storage portion formed on the second tunnel insulation film and comprising an insulation film expressed by SiY(SiO2)X(Si3N4)1-XMZ (where, M denotes an element other than Si, O, and N, and 0≦X≦1, Y>0, and Z≧0);
- and
- a control electrode formed on the charge storage portion and controlling a height of the energy barrier.
Dependencies are inferred from the claim text.