Semiconductor structure, semiconductor device, and method and apparatus for manufacturing the same
AssigneeAdvanced LCD Technologies Dev. Ctr. Co., Ltd
InventorsMasato Hiramatsu, Yoshinobu Kimura, Hiroyuki Ogawa, Masayuki Jyumonji, Yoshitaka Yamamoto, Masakiyo Matsumura
Life of this patent
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Abstract
A semiconductor device includes a non-single-crystal semiconductor film, a support substrate that supports the non-single-crystal semiconductor film, and an active device having a part of the non-single-crystal semiconductor film as a channel region. In particular, the channel region has an oxygen concentration not higher than 1×1018 atoms/cm3 and a carbon concentration not higher than 1×1018 atoms/cm3.
Claims21
1-19. (canceled)
A manufacturing method for a semiconductor structure, comprising:
- forming a non-single-crystal semiconductor film on a support substrate;
- melting and recrystallizing the non-single-crystal semiconductor film by applying laser light having intensity distribution which provides a temperature gradient in the non-single-crystal semiconductor film and allows a crystal grain for accommodating a channel region of a thin-film transistor to horizontally grow in a direction defined by the temperature gradient;
- and
- controlling the forming and the melting and recrystallizing of the non-single-crystal semiconductor film such that the non-single-crystal semiconductor film has an oxygen concentration and a carbon concentration each no higher than 1×1018 atoms/cm3.
A manufacturing method for a semiconductor device, comprising:
- forming a non-single-crystal semiconductor film on a support substrate;
- melting and recrystallizing the non-single-crystal semiconductor film by applying laser light having intensity distribution which provides a temperature gradient in the non-single-crystal semiconductor film and allows a crystal grain for accommodating a channel region of a thin film transistor to horizontally grow in a direction defined by the temperature gradient;
- forming the thin film transistor having the channel region accommodated in the crystal grain;
- and
- controlling the forming and the melting and recrystallizing of the non-single-crystal semiconductor film and the forming of the thin film transistor such that the non-single-crystal semiconductor film has an oxygen concentration and a carbon concentration each no higher than 1×1018 atoms/cm3.
A manufacturing method for a semiconductor device, comprising:
- forming a non-single-crystal semiconductor film on a support substrate;
- melting and recrystallizing the non-single-crystal semiconductor film by applying laser light having intensity distribution which provides a temperature gradient in the non-single-crystal semiconductor film and allows a crystal grain for accommodating a channel region of a thin film transistor to horizontally grow in a direction defined by the temperature gradient;
- forming the thin film transistor having the channel region accommodated in the crystal grain;
- and
- controlling the forming and the melting and recrystallizing of the non-single-crystal semiconductor film and the forming of the thin film transistor such that the non-single-crystal semiconductor film has an oxygen concentration no higher than 1×1018 atoms/cm3 and a stacking fault density no higher than 1×108/cm3.
A manufacturing method for a semiconductor structure having a non-single-crystal semiconductor film including a channel region of a thin film transistor, and a support substrate that supports the non-single-crystal semiconductor film, the method comprising subjecting an inner wall of a film-forming chamber to a surface etching process with a fluorine-based gas, coating the inner wall with an amorphous semiconductor film with a thickness of 50 to 1000 nm, placing the support substrate in the film-forming chamber and forming the non-single-crystal semiconductor film by heating.
A manufacturing apparatus for a semiconductor structure having a non-single-crystal semiconductor film including a channel region of a thin film transistor, and a support substrate that supports the non-single-crystal semiconductor film, the apparatus comprising a film-forming unit that accommodates the support substrate in a film-forming chamber and forms the non-single-crystal semiconductor film, and a crystallizing unit that melts and recrystallizes the non-single-crystal semiconductor film, the film-forming chamber having an inner wall formed of a metal containing aluminum.
A manufacturing method for a semiconductor device having a non-single-crystal semiconductor film, a support substrate that supports the non-single-crystal semiconductor film, and a thin film transistor having a part of the non-single-crystal semiconductor film as a channel region, the method comprising subjecting an inner wall of a film-forming chamber to a surface etching process with a fluorine-based gas, coating the inner wall with an amorphous semiconductor film with a thickness of 50 to 1000 nm, placing the support substrate in the film-forming chamber and forming the non-single-crystal semiconductor film, and melting and recrystallizing the non-single-crystal semiconductor film, thus forming the thin transistor having the part of the non-single-crystal semiconductor film as the channel region.
Dependencies are inferred from the claim text.