Capacitor that includes high permittivity capacitor dielectric
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYee-Chia Yeo, Chenming Hu
Life of this patent
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Abstract
A decoupling capacitor is formed on a semiconductor substrate that includes a silicon surface layer. A substantially flat bottom electrode is formed in a portion of the semiconductor surface layer. A capacitor dielectric overlies the bottom electrode. The capacitor dielectric is formed from a high permittivity dielectric with a relative permittivity, preferably greater than about 5. The capacitor also includes a substantially flat top electrode that overlies the capacitor dielectric. In the preferred application, the top electrode is connected to a first reference voltage line and the bottom electrode is connected to a second reference voltage line.
Claims11
A method of forming a decoupling capacitor, the method comprising:
- providing a semiconductor substrate that includes a silicon surface layer;
- forming a substantially flat bottom electrode in a portion of the silicon surface layer, the bottom electrode being doped to a first conductivity type;
- forming a capacitor dielectric over the bottom electrode, the capacitor dielectric comprising a high permittivity dielectric with a relative permittivity greater than about 5;
- forming a substantially flat top electrode over the capacitor dielectric;
- forming a doped region within the silicon surface layer adjacent to the bottom electrode, the doped region doped to a second conductivity type;
- and
- electrically coupling the top electrode to a first reference voltage line;
- and
- electrically coupling the bottom electrode to a second reference voltage line.
Dependencies are inferred from the claim text.