Field effect transistor and method for fabricating the same
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsTetsuzo Ueda, Hidetoshi Ishida, Tsuyoshi Tanaka
Life of this patent
Estimating the term…
Abstract
A field effect transistor includes a first semiconductor layer made of a multilayer of a plurality of semiconductor films and a second semiconductor layer formed on the first semiconductor layer. A source electrode and a drain electrode are formed on the second semiconductor layer to be spaced from each other. An opening having an insulating film on its inner wall is formed in a portion of the second semiconductor layer sandwiched between the source electrode and the drain electrode so as to expose the first semiconductor layer therein. A gate electrode is formed in the opening to be in contact with the insulating film and the first semiconductor layer on the bottom of the opening.
Claims20
A field effect transistor comprising:
- a first semiconductor layer made of a multilayer of a plurality of semiconductor films;
- a second semiconductor layer formed in contact with a principal plane of said first semiconductor layer;
- a source electrode and a drain electrode spaced from each other and formed on a face of said second semiconductor layer opposite to said first semiconductor layer;
- an opening formed in a portion of said second semiconductor layer sandwiched between said source electrode and said drain electrode and exposing said first semiconductor layer therein;
- an insulating film formed at least on an inner wall of said opening;
- and
- a gate electrode in contact with said insulating film and a portion of said first semiconductor layer exposed in said opening.
A field effect transistor comprising:
- a first semiconductor layer made of a multilayer of a plurality of semiconductor films;
- a second semiconductor layer formed in contact with a principal plane of said first semiconductor layer;
- a source electrode and a drain electrode spaced from each other and formed on a face of said second semiconductor layer opposite to said first semiconductor layer;
- an opening formed in a portion of said second semiconductor layer sandwiched between said source electrode and said drain electrode and exposing said first semiconductor layer therein;
- and
- a gate electrode in contact with a portion of said first semiconductor layer exposed in said opening,
- wherein said first semiconductor layer has a mesa portion in a portion thereof sandwiched between said source electrode and said drain electrode.
A method for fabricating a field effect transistor comprising the steps of:
- (a) forming, on a substrate, a first semiconductor layer made of a multilayer of a plurality of semiconductor films;
- (b) selectively forming a mask on said first semiconductor layer;
- (c) forming a second semiconductor layer on said first semiconductor layer by using said mask;
- (d) forming an opening in said second semiconductor layer by removing said mask;
- (e) forming, in a portion of said second semiconductor layer including said opening, a gate electrode in contact with a portion of said first semiconductor layer exposed in said opening;
- and
- (f) forming a source electrode and a drain electrode on respective sides of said gate electrode on said second semiconductor layer.
Dependencies are inferred from the claim text.