Semiconductor device and method for fabricating the same
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsYutaka Hirose, Tsuyoshi Tanaka
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Abstract
A semiconductor device includes a semiconductor substrate of n-type silicon including, in an upper portion thereof, a first polarity inversion region and a second polarity inversion regions spaced from each other and doped with a p-type impurity. A first HFET including a first active layer and a second HFET including a second active layer both made of a group Ill-V nitride semiconductor are independently formed on the respective polarity inversion regions in the semiconductor substrate, and the HFETs are electrically connected to each other through interconnects.
Claims14
A semiconductor device comprising:
- a semiconductor substrate of a first conductivity type having, in an upper portion thereof, a plurality of polarity inversion regions spaced from one another and formed by introducing an impurity of a second conductivity type;
- a plurality of semiconductor elements selectively formed respectively on said polarity inversion regions and respectively including independent active layers made of a group III-V nitride semiconductor;
- and
- interconnects for electrically connecting said semiconductor elements to one another.
A method for fabricating a semiconductor device comprising the steps of:
- forming, in an upper portion of a semiconductor substrate of a first conductivity type, a plurality of polarity inversion regions spaced from one another by selectively introducing a first impurity of a second conductivity type into said semiconductor substrate;
- forming a semiconductor layer made of a group III-V nitride over said semiconductor substrate including said polarity inversion regions;
- forming insulating isolation regions extending from said semiconductor layer to said semiconductor substrate by selectively introducing a second impurity into portions of said semiconductor layer and said semiconductor substrate disposed around said polarity inversion regions, whereby respectively forming, on said polarity inversion regions, a plurality of element forming regions each including an active layer in said semiconductor layer;
- forming a plurality of semiconductor elements by forming electrodes on said element forming regions;
- and
- forming interconnects for electrically connecting said semiconductor elements to one another on said plurality of semiconductor elements.
A semiconductor device comprising:
- a semiconductor substrate having buried insulating layers formed, from a principal face thereof toward an inner portion thereof, to be spaced from one another;
- a plurality of semiconductor elements formed to be spaced from one another on said semiconductor substrate and respectively including independent active layers made of a group III-V nitride semiconductor;
- and
- interconnects for electrically connecting said semiconductor elements to one another.
A method for fabricating a semiconductor device comprising the steps of:
- forming a semiconductor layer made of a group III-V nitride on a conducting semiconductor substrate that includes buried insulating layers formed, from a principal face thereof toward an inner portion thereof, to be spaced from one another;
- forming insulating isolation regions extending to said buried insulating layers by selectively introducing an impurity into said semiconductor layer and said semiconductor substrate, whereby forming, on said semiconductor substrate, a plurality of element forming regions each including an active layer in said semiconductor layer;
- forming a plurality of semiconductor elements by forming electrodes on said element forming regions;
- and
- forming interconnects for electrically connecting said semiconductor elements to one another on said plurality of semiconductor elements.
Dependencies are inferred from the claim text.