US 2006/0124956 A1 · Quasi group III-nitride substrates and methods of mass production of the same

Abstract

The present invention discloses the large area high quality quasi group III-nitride substrates comprising two categories: electrically conductive and isolating. The methods manufacturing the same comprise the following process steps in the order presented: disposing a first intermediate layer on a large area silicon (Si) original growth substrate, disposing a group III-nitride epitaxial layer including a n- or p-type epitaxial layer, disposing a reflector/Ohmic layer, disposing a second intermediate layer, disposing a supporting plate, removing the silicon original growth substrate and the first intermediate layer, then the group III-nitride epitaxial layer exposed. Vertical and lateral GaN based LEDs growing on electrically conductive and isolating quasi group III-nitride substrates respectively are disclosed.

Claims19

Dependent claims

A quasi group III-nitride substrate, comprises:

a substrate;
a group III-nitride epitaxial layer disposed on said substrate;
wherein the structures of said group III-nitride epitaxial layer is selected from a group comprising single layer structure, multiple layer structure, and compositionally graded structure.

A method for manufacturing quasi group III-nitride substrates, comprises process steps, in the order presented:

providing an original growth substrate;
disposing a first intermediate layer on said original growth substrate;
wherein the material system of said first intermediate layer being selected from a group comprising an epitaxial layer, a low melting point metal layer, a high melting point metal layer, and nitrides of said high melting point metals, and combinations thereof;
wherein said epitaxial layer being disposed by methods comprising MBE and MOCVD;
wherein said low melting point metal layer being disposed by methods comprising vacuum evaporation;
wherein said high melting point metal layer being disposed by methods comprising vacuum evaporation, MOCVD, and combinations thereof;
said nitrides being disposed by methods comprising vacuum evaporation, nitriding, MOCVD, and combinations thereof;
disposing a group III-nitride epitaxial layer on said first intermediate layer;
wherein said group III-nitride epitaxial layer being disposed by methods comprising MBE and MOCVD;

6 more elements

Dependencies are inferred from the claim text.

Quasi group III-nitride substrates and methods of mass production of the same

Life of this patent

Quasi group III-nitride substrates and methods of mass production of the same

Life of this patent

Abstract

Claims19