Method of fabricating CMOS image sensor
AssigneeDongbuAnam Semiconductor Inc.
InventorYong Lee
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Abstract
A method of fabricating a CMOS image sensor is provided, in which a trapezoidal microlens pattern profile is formed to facilitate reflowing the microlens pattern and by which a curvature of the microlens may be enhanced to raise its light-condensing efficiency. The method includes forming a plurality of photodiodes on a semiconductor substrate; forming an insulating interlayer on the semiconductor substrate including the photodiodes; forming a protective layer on the insulating interlayer; forming a plurality of color filters corresponding to the photodiodes; forming a top coating layer on the color filters; forming a microlens pattern on the top coating layer; and forming a plurality of microlenses by reflowing the microlens pattern.
Claims16
A method of fabricating a CMOS image sensor, comprising:
- forming a plurality of photodiodes on or in a semiconductor substrate;
- forming an insulating interlayer on the semiconductor substrate including the photodiodes;
- forming a protective layer on the insulating interlayer;
- forming a plurality of color filters corresponding to the plurality of photodiodes;
- forming a top coating layer on the plurality of color filter layers;
- forming a microlens pattern on the top coating layer corresponding to the color filters;
- and
- forming a plurality of microlenses by reflowing the microlens pattern.
A method of fabricating a CMOS image sensor, comprising:
- forming a plurality of color filters on an insulating interlayer on a semiconductor substrate, the semiconductor substrate including a plurality of photodiodes therein, and each color filter comprising a plurality of indented portions on a plurality of boundaries thereof;
- forming a coating layer on the plurality of color filters;
- forming a microlens pattern on the coating layer;
- and
- reflowing the microlens pattern to form a plurality of microlenses, each microlens corresponding to a unique color filter.
A CMOS image sensor, comprising:
- a plurality of photodiodes on or in a semiconductor substrate;
- an insulating interlayer on the semiconductor substrate including the photodiodes;
- a color filter layer on the insulating interlayer, the color filter layer comprising a plurality of color filters, each color filter comprising a plurality of indented portions on a plurality of boundaries thereof;
- a coating layer on the color filter layer;
- forming a plurality of microlens patterns to color filter layers, respectively;
- and
- forming a plurality of microlenses on the coating layer, each of the plurality of microlenses corresponding to a unique photodiode.
Dependencies are inferred from the claim text.