Radiation-emitting semiconductor component and method for the production thereof

The component as claimed in claim 26,

• wherein
• that side of the radiation-generating layer (2) which is remote from the substrate (1) is provided for the mounting of the component.

The component as claimed in claim 26,

• wherein
• the perpendicular side areas (5) form a base (6) on the underside of the substrate, the inclined side areas (3) adjoining the top side of said base.

The component as claimed in claim 26,

• wherein
• the inclined side areas (3) form an angle (α) of between 15 and 40° with the underside of the substrate.

The component as claimed in claim 26,

• wherein
• the substrate (1) has a width (B) of between 300 and 2000 μm on the underside.

The component as claimed in claim 26,

• wherein
• the substrate (1) has a thickness (D) of between 200 and 300 μm.

The component as claimed in claim 26,

• wherein
• the radiation-generating layer (2) covers the underside of the substrate apart from an outer free edge (7) having a width (bF) of between 10 and 50 μm.

The component as claimed in claim 26,

• wherein
• the radiation-generating layer (2) has bevelled side edges (8), which reflect the light emitted laterally with respect to the substrate (1) in the direction of the substrate (1).

The component as claimed in claim 26,

• wherein
• the substrate (1) contains silicon carbide.

The component as claimed in claim 26,

• wherein
• the substrate (1) contains hexagonal 6H silicon carbide.

The component as claimed in claim 26,

• wherein
• the radiation-generating layer (2) contains gallium nitride.

The component as claimed in claim 26,

• wherein
• the underside of the substrate has a width (B) of at least 300 μm.

A method for producing a radiation-emitting semiconductor component as claimed in claim 26,

• having the following steps:
• a) sawing of V-shaped trenches (14) into a radiation-transmissive substrate (1) by means of a suitably shaped saw, a residual thickness (dr) of the substrate (1) remaining throughout,
• b) singulation of the substrate (1) into a multiplicity of individual substrates (15) along the trenches (14).