US 2006/0124939 A1 · Method for manufacturing GaN-based light emitting diode using laser lift-off technique and light emitting diode manufactured thereby

Abstract

A simplified manufacturing process for massive production of LEDs that have superior light emitting efficiency and superior heat discharging efficiency. The method employs a laser lift-off technique instead of the flip-chip bonding technique and it does not require a photolithography process, thereby substantially reducing the process steps and enhancing the heat discharging efficiency. The LED chips are formed as unit chips before irradiating the laser, thereby increasing the yield and realizing the mass production by preventing cleavage of the crystal structures. Heat discharging efficiency is also increased by roughening the surface of an n-type GaN layer. The light emitting area can be widened 30% more than in the flip-chip technique. Thus, the present invention serves to increase the light output and the heat discharging area, thereby drastically enhancing the performance of manufacturing high-output LEDs.

Claims13

Dependent claims

A method for manufacturing a light emitting diode using a sapphire substrate, on which a crystal structure of the light emitting diode has grown, comprising the steps of:

separating the sapphire substrate, on which said light emitting diode has grown, into a unit chip;
and
irradiating laser toward said sapphire substrate separated into said unit chip to remove the sapphire substrate.

A method for manufacturing a light emitting diode using a sapphire substrate, on which a crystal structure of the light emitting diode has grown, comprising the steps of:

forming a p-type ohmic contact on a p-type GaN based semiconductor layer, which is the top layer of a structure of said light emitting diode;
polishing the sapphire substrate surface of said sapphire wafer;
separating the sapphire substrate, on which said light emitting diode has grown, into a unit chip;
bonding said p-type ohmic contact metal surface separated into said unit chip to a sub-mount substrate;
irradiating laser toward the surface of said unit chip substrate bonded to said sub-mount substrate to remove the sapphire substrate;
forming an n-type ohmic contact on an n-type GaN based semiconductor layer having a structure of light emitting diode exposed upon removal of said sapphire substrate, and dicing the sub-mount substrate, on which said unit light emitting diode chip has been attached as a unit sub-mount chip;
attaching the unit sub-mount chip, on which the structure of said unit light emitting diode has been bonded, to a lead frame;
and
wire bonding an anode and a cathode of the unit sub-mount chip, on which the structure of said unit light emitting diode has been bonded to the lead frame, and performing a treatment of molding materials.

6 more elements

Dependencies are inferred from the claim text.

Method for manufacturing GaN-based light emitting diode using laser lift-off technique and light emitting diode manufactured thereby

Life of this patent

Method for manufacturing GaN-based light emitting diode using laser lift-off technique and light emitting diode manufactured thereby

Life of this patent

Abstract

Claims13