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AssigneeCanon Kabushiki Kaisha
InventorsYoichi Fukumiya, Tetsuro Saito, Tatsumi Shoji
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A thin film transistor produced through flattening a gate insulating film acquires the high mobility of a carrier, but has a problem of occasionally showing low resistivity, low withstanding voltage, and consequent low reliability. The present invention solves the above described problem and provides a thin film transistor having the high mobility, the high resistivity, the high withstanding voltage and the high reliability. The present invention also provides a method for producing a thin film transistor having a semiconductor film formed on a gate insulating film thereon, which has the steps of: forming the gate insulating film; and flattening a surface of the gate insulating film by irradiating the surface of the gate insulating film with a gas cluster ion beam.
A method for producing a thin film transistor having the steps of forming a gate insulating film and forming a semiconductor film for forming a channel region on the gate insulating film, comprising the steps of:
An apparatus for producing a semiconductor device having a film forming chamber for forming a desired film on a substrate, and a gas cluster irradiation chamber for flattening a surface of the film formed in the film forming chamber, wherein the film forming chamber is coupled with the irradiation chamber.
Dependencies are inferred from the claim text.