Thin film transistor array panel for x-ray detector
AssigneeSamsung Electronics Co., Ltd.
InventorsIn-Su Joo, Joon-Hoo Choi
Life of this patent
Estimating the term…
Abstract
A thin film transistor array panel for an X-ray detector includes a dummy pixel including a photo diode and a TFT for detecting leakage current. The photo diode includes first and second electrodes (178,195) facing each other and a photo-conductive layer (800) disposed between the first electrode and the second electrode. The TFT includes a semiconductor layer (150), a gate electrode (123), a source electrode (173) connected to a data line, a drain electrode (175) connected to the photo diode. The dummy pixel further includes a light blocking layer (196) for blocking light incident on the photo diode. Alternatively, the semiconductor layer is disconnected between the source electrode and the drain electrode.
Claims6
A thin film transistor array panel for an X-ray detector, the panel comprising:
- a gate wire formed on an insulating substrate and including a gate lines and a gate electrode connected to the gate line;
- a gate insulating layer formed on the gate wire;
- a semiconductor layer formed on the gate insulating layer;
- a data wire formed on the gate insulating layer and including a data line intersecting the gate line, a source electrode connected to the data line and disposed on the semiconductor layer at least in part, and a drain electrode disposed on the semiconductor layer at least in part and separated from the source electrode;
- a photo diode including a first electrode connected to the drain electrode, a second electrode facing the first electrode, and a photo-conductive layer disposed between the first electrode and the second electrode;
- a bias signal line connected to the second electrode;
- and
- a light blocking layer covering the photo diode.
A thin film transistor array panel for an X-ray detector, the panel comprising:
- a gate wire formed on an insulating substrate and including a gate lines and a gate electrode connected to the gate line;
- a gate insulating layer formed on the gate wire;
- a semiconductor layer formed on the gate insulating layer;
- a data wire formed on the gate insulating layer and including a data line intersecting the gate line, a source electrode connected to the data line and disposed on the semiconductor layer at least in part, and a drain electrode disposed on the semiconductor layer at least in part and separated from the source electrode;
- a photo diode including a first electrode connected to the drain electrode, a second electrode facing the first electrode, and a photo-conductive layer disposed between the first electrode and the second electrode;
- and
- a bias signal line connected to the second electrode and including a light blocking layer covering the photo diode.
A thin film transistor array panel for an X-ray detector, the panel comprising:
- a gate wire formed on an insulating substrate and including a gate lines and a gate electrode connected to the gate line;
- a gate insulating layer formed on the gate wire;
- a semiconductor layer formed on the gate insulating layer;
- a data wire formed on the gate insulating layer and including a data line intersecting the gate line, a source electrode connected to the data line and disposed on the semiconductor layer at least in part, and a drain electrode disposed on the semiconductor layer at least in part and separated from the source electrode;
- a photo diode including a first electrode connected to the drain electrode, a second electrode facing the first electrode, and a photo-conductive layer disposed between the first electrode and the second electrode;
- and
- a bias signal line connected to the second electrode,
- wherein the semiconductor layer is disconnected between the source electrode and the drain electrode.
Dependencies are inferred from the claim text.