Thin film transistor and method of making the same
OwnerChi-Wen Chen, Ting-Chang Chang +2inventors
InventorsChi-Wen Chen, Ting-Chang Chang, Po-Tsun Liu, Feng-Yuan Gan
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Abstract
A thin film transistor is characterized by having an island-in structure having a semiconductor layer with a channel region, a bottom heavily-doped semiconductor layer, and a top heavily-doped semiconductor layer. The bottom heavily-doped semiconductor layer is positioned on two opposite sides of the surface of the semiconductor layer beyond the channel region. The top heavily-doped semiconductor layer, positioned on the bottom heavily-doped semiconductor layer, covers two opposite side walls of the bottom heavily-doped semiconductor layer and the semiconductor layer so that current leakage from the drain electrode to the source electrode is prevented.
Claims22
A thin film transistor, comprising:
- a substrate;
- a gate electrode disposed on the substrate;
- a gate insulating layer disposed on the substrate to cover the gate electrode;
- an island structure, disposed on the gate insulating layer, comprising:
- a semiconductor layer, disposed on the gate insulating layer corresponding to the gate electrode, having a channel region;
- and
- a top heavily-doped semiconductor layer disposed on the semiconductor layer to cover at least one side wall of the semiconductor layer;
- and
- a source electrode and a drain electrode disposed on the top heavily-doped semiconductor layer, respectively.
A method for fabricating a thin film transistor, comprising:
- providing a substrate;
- forming a gate electrode on the substrate;
- forming a gate insulating layer on the gate electrode;
- forming a semiconductor layer on the gate insulating layer;
- removing a portion of the semiconductor layer to make the remaining semiconductor layer correspond to the gate electrode;
- forming a top heavily-doped semiconductor layer on the gate insulating layer to cover at least one side wall of the semiconductor layer;
- forming a conductive layer on the top heavily-doped semiconductor layer;
- and
- removing a portion of the conductive layer and the top heavily-doped semiconductor layer to expose the semiconductor layer.
Dependencies are inferred from the claim text.