Semiconductor substrate for solid-state image pickup device and producing method therefor
AssigneeCanon Kabushiki Kaisha
InventorsShigeru Nishimura, Seiichi Tamura, Hiroshi Yuzurihara
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Abstract
A semiconductor substrate for forming a pixel area provided surfacially with a plurality of pixels for photoelectric conversion, the semiconductor substrate, including a polysilicon film of a thickness of 0.5-2.0, on a rear surface of the pixel area-bearing surface, and having an oxygen concentration of 1.3-1.5E+18 atom/cm3 (old ASTM).
Claims4
A semiconductor substrate for forming a pixel area provided at a surface thereof with a plurality of pixels for photoelectric conversion, the semiconductor substrate comprising:
- a polysilicon film of a thickness T within a range of 0.5≦T≦2.0 μm, on a rear surface of the pixel area-bearing surface;
- wherein the semiconductor substrate has an oxygen concentration D within a range of 1.3E18≦D≦1.5E18 atom/cm3 (old ASTM).
A semiconductor substrate for forming a pixel area provided at a surface thereof with a plurality of pixels for photoelectric conversion, the semiconductor substrate comprising:
- a polysilicon film of a thickness T within a range of 0.5≦T≦2.0 μm, on a rear surface of the pixel area-bearing surface:
- and
- a non-defective area formed in a part of the semiconductor substrate:
- wherein the semiconductor substrate has a bulk micro defect density of 1E5/cm2 or higher.
Dependencies are inferred from the claim text.