n-Type thiophene semiconductors
AssigneeNorthwestern University
InventorsTobin Marks, Antonio Facchetti
Life of this patent
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Abstract
The new fluorocarbon-functionalized and/or heterocycle-modified polythiophenes, in particular, α,ω-diperfluorohexylsexithiophene DFH-6T can be straightforwardly prepared in high yield and purity. Introduction of such modifications to a thiophene core affords enhanced thermal stability and volatility, and increased electron affinity versus the unmodified compositions of the prior art. Evaporated films behave as n-type semiconductors, and can be used to fabricate thin film transistors with FET mobilities ˜0.01 cm2/Vs—some of the highest reported to date for n-type organic semiconductors.
Claims7
1-10. (canceled)
An n-type polythiophene composition having the structural formula
- wherein R1, R2 and R3 are substituents selected from fluoroalkyl moieties, CnH2n+1 and where n ranges from 1-about 12, H, F, and (CH2)aX and where a ranges from 1-about 12 and X is selected from amino, hydroxy and carboxylic acid functionalities;
- and x, is an integer selected from the group of integers consisting of 1 and integers greater than 1;
- y is an integer selected from the group of integers consisting of 0 and integers greater than 0, providing said composition comprises at least one said non-thiophenyl component;
- z is an integer selected from the group of integers consisting of 0 and integers greater than 0;
- and A, B, W and Z are moieties selected from N and CH.
16-22. (canceled)
Dependencies are inferred from the claim text.