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AssigneeAsahi Glass Company, Limited
InventorsKazuo Sunahara, Hiroyuki Tomonaga, Yoshihisa Beppu
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The present invention provides a liquid composition for forming a thin film, with which a ferroelectric thin film having excellent characteristics can be prepared even by baking at a low temperature, and a process for producing a ferroelectric thin film using it. A liquid composition for forming a ferroelectric thin film is used, which is characterized by comprising a liquid medium, crystalline ferroelectric oxide particles represented by the formula (Bi2O2)2+(Bim-1TimO3.5m-0.5)2− (wherein m is an integer of from 1 to 5) or (Bi2O2)2+(Am-1TimO3.5m-0.5)2− (wherein A is Bi3+ or La3+, the La3+/Bi3+ ratio is from 0.05 to 0.5, and m is an integer of from 1 to 5) and having an average primary particle diameter of at most 100 nm, dispersed in the liquid medium, and a soluble metal compound capable of forming a ferroelectric oxide by heating, dissolved in the liquid medium.
A liquid composition for forming a ferroelectric thin film characterized by comprising a liquid medium, crystalline ferroelectric oxide particles represented by the formula (Bi2O2)2+(Bim-1TimO3.5m-0.5)2− (wherein m is an integer of from 1 to 5) and having an average primary particle diameter of at most 100 nm, dispersed in the liquid medium, and a soluble metal compound capable of forming a ferroelectric oxide by heating, dissolved in the liquid medium.
A liquid composition for forming a ferroelectric thin film characterized by comprising a liquid medium, crystalline ferroelectric oxide particles represented by the formula (Bi2O2)2+(Am-1TimO3.5m-0.5)2− (wherein A is Bi3+ or La3+, the La3+/Bi3+ ratio is from 0.05 to 0.5, and m is an integer of from 1 to 5) and having an average primary particle diameter of at most 100 nm, dispersed in the liquid medium, and a soluble metal compound capable of forming a ferroelectric oxide by heating, dissolved in the liquid medium.
Dependencies are inferred from the claim text.