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US 2006/0124866 A1Published application
Electron beam exposure method and system therefor
OwnerTokushige Hisatsuguinventor
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OwnerTokushige Hisatsuguinventor
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A method of leading an electron beam radiated from an electron emitter through openings provided in a stencil mask to a sensitive sample and exposing it includes placing the electron beam under a low field intensity where the electron beam progresses at a slow speed until reaching the openings of the stencil mask and thereafter placing the electron beam having passed through the openings of the stencil mask under a high field intensity where the electron beam progresses at a high speed. An apparatus for electron beam projection lithography comprises an electron emitter, a stencil mask having openings for permitting the electron beam radiated from the electron emitter to pass through, a base for supporting an exposure sample, and a device for placing the electron beam under a low field intensity as well as a high field generator for placing the electron beam under a high field intensity.
A method of electron beam projection lithography for leading and exposing an electron beam radiated from an electron emitter through openings provided in a stencil mask to an exposure sample, wherein said electron beam is placed under a comparatively low field intensity where the electron beam progresses at a comparatively slow speed until reaching the openings of said stencil mask, and wherein, thereafter, the electron beam having passed through the openings of said stencil mask is placed under a comparatively high field intensity where the electron beam progresses at a comparatively high speed.
An apparatus for electron beam projection lithography comprising:
Dependencies are inferred from the claim text.